1994. 3. 22 1/2 semiconductor technical data KTA1268 epitaxial planar pnp transistor revision no : 0 low noise amplifier application. high voltage application. features low noise. : nf=3db(typ.), rg=100 u , v ce =-6v, i c =-100 a, f=1khz : nf=0.5db(typ.), rg=1k u , v ce =-6v, i c =-100 a, f=1khz. high dc current gain : h fe =200 700. high voltage : v ceo =-120v. low pulse noise. low 1/f noise. complementary to ktc3200. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) note : h fe classification gr:200 400, bl:350 700 characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -100 ma emitter current i e 100 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -120 - - v dc current gain h fe (note) v ce =-6v, i c =-2ma 200 - 700 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma - - -0.3 v base-emitter voltage v be v ce =-6v, i c =-2ma - -0.65 - v transition frequency f t v ce =-6v, i c =-1ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 - pf noise figure nf v ce =-6v, i c =-100 a, f=10hz, rg=10k u - - 6.0 db v ce =-6v, i c =-100 a, f=1khz, rg=10k u - - 2.0 v ce =-6v, i c =-100 a f=1khz, rg=100 u - 3.0 -
1994. 3. 22 2/2 KTA1268 revision no : 0 h (x k ? ) i e r e h (x10 ) - 5 h (x1 0 ) r e -5 collector current i ( a) nf - r , i g signal source resistance r ( ? ) c h parameter - v ce ce collector-emitter voltage v (v) -1 5 h parameter 10 10 h parameter 1 100 30 10 emitter current i ( a) e e h parameter - i nf - r , i c g c collector current i ( a) -10 100 g signal source resistance r ( ? ) 10 -100 -1k -10k 1k 10k 100k v =-6v ce f=10hz nf=1db 2 3 4 6 8 12 12 1 0 10 c g 10 100 -100 -10 -1k -10k 1k 10k 100k common emitter v =-6v f=1khz ce nf=1d b 2 3 4 6 8 10 12 nf=1 d b 2 3 4 6 8 10 12 50 dc current gain h fe 100 -0.1 collector current i (ma) c c fe h - i -0.3 -1 -3 -10 -50 300 500 1k 3k 5k common emitter v =-6v ta=25 c ce ta=25 c ta=-25 c ta=100 c 100 300 1k 3k 10 k 3 5 30 50 300 500 1k common emitter v =-6v f=270hz ta=25 c ce h fe h (x ? ) oe -3 -5 -10 -30 -50 -100 30 50 100 300 500 700 common emitter i =1ma f=270hz ta=25 c e fe h oe h (x ? ) h ( x k ? ) ie
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